EQUIPMENT
FOR CRYSTAL GROWTH FROM THE MELT
UNDER HIGH INERT GAS PRESSURE

Main technical characteristics:

Working temperature: up to 1900 oC
Working pressure: up to 10 MPa
Power: 2-12 kWt (depends on the working temperature)
Ambient medium: Inert gases or N2
Pulling rate: from 0.5-1 to 20-30 mm/h
Heater: Resistive; graphite
Cooling: Water
Personnel:  1 per 2 devices
Methods of growth: - High-Pressure Vertical Bridgman (HPVB);
- High-Pressure Vertical Zone Melting (HPVZM);
Crystal shape: Cylinder, cone or tape (plate)
Max. crystal diameter:  40 mm (standard); 51 mm (by special order);
Max. crystal length:  100 mm (standard); 130 mm (by special order);
Max. tape (plate) sizes:  120 x 120 x 12 mm
Temperature regulator: Included
Min. room area necessary:  6 m2 per 1 device
Suitable for crystal growth of: Wide-gap II-VI compounds ( ZnSe, ZnS, ZnTe, CdSe, CdS) and their mixtures (e.g., Cd1-xZnxTe, Cd1-xZnxSe);
Other metal chalcogenides (e.g., GaTe, MnSe, PbSe, PbS, PbTe, Bi2Se3, Bi2Te3);
Doped crystals of the metal chalcogenides;

Three devices in the growth room