Bismuth chalcogenides (Bi2Se3, Bi2Te3)
 
Bi2Se3
Bi2Te3
CAS #
12068-69-8
1304-82-1
Growth method
Bridgman
Bridgman
Structure
Hexagonal
Hexagonal
Lattice parameters
a=4.14 A,  c=28.7 A
a=4.38 A,  c=30.49 A
Density
7.51 g/cm3
7.85 g/cm3
Knoop microhardness
167 N/mm2
155 N/mm2
Eg
0.35 eV
0.21 eV
Melting point
706o C
585o C
Max. single crystal diameter/length:
Æ30´30-40 mm
Æ30´30-40 mm
Available orientation
(0001)
(0001)
Available dopants any (except gases and radioactive elements) any (except gases and radioactive elements)
Surface quality (for polished)
60/40, Ra<0.01 (um), Rz<0.05 (um)
60/40, Ra<0.01 (um), Rz<0.05 (um)
Application fields R&D, Topological insulators R&D, Topological insulators

Bismuth chalcogenide crystals:

Bi2Te3:Er
Bi2Te3
Bi2Te3:Sn
Bi2Te3:Tl
Bi2Se3:Ca
Bi2Se3 "as synthesized"