N.N. Kolesnikov, A.A. Kolchin, D.L. Alov, Yu.N.
Ivanov, A.A. Chernov, M. Schiber, H. Hermon, R.B. James, M.S. Goorsky,
H. Yoon, J. Toney, B. Brunett, T.E. Schlesinger.
Growth and characterization of p-type Cd1-x
ZnxTe(x = 0.2, 0.3, 0.4).
Single crystals of p-type semi-insulating Cd1-x
ZnxTe (CZT) with x = 0.2,
0.3 and 0.4 were grown using the high-pressure vertical Bridgman method.
The crystals showed a high degree of axial homogeneity over most of the
length of the ingot. The crystals were characterized by measuring the specific
resistivity, X-ray spectral analysis, triaxial rocking curves, photoluminescence,
etch-pit density and photocurrent kinetics. Despite the high homogeneity
the photocurrent kinetics are worse than n-type CZT (x = 0.1, and
0.2) also grown by high-pressure vertical Bridgman.